Semiconductor device

摘要

A semiconductor substrate has an element portion and a termination portion located on an outer side of the element portion. A first electrode layer is provided on a first surface of the semiconductor substrate. A second electrode layer is provided on a second surface of the semiconductor substrate in an upper portion of the element portion. An interlayer insulation film is provided on the second surface of the semiconductor substrate. The interlayer insulation film has: an element insulation portion that provides insulation between a part of the element portion of the semiconductor substrate and the second electrode layer; and a termination insulation portion covering a termination portion of the semiconductor substrate. The termination insulation portion includes a high dielectric constant film that is higher in dielectric constant than the element insulation portion.

主权项

1. A semiconductor device comprising:
a semiconductor substrate made of a wide band gap semiconductor and having a first surface and a second surface opposite to said first surface, said semiconductor substrate having an element portion and a termination portion located on an outer side of said element portion; a first electrode layer provided on said first surface of said semiconductor substrate; a second electrode layer provided on said second surface of said semiconductor substrate in an upper portion of said element portion; and an interlayer insulation film provided on said second surface of said semiconductor substrate, said interlayer insulation film having an element insulation portion providing insulation between a part of said element portion of said semiconductor substrate and said second electrode layer, and a termination insulation portion covering said termination portion of said semiconductor substrate, said termination insulation portion including a high dielectric constant film that is higher in dielectric constant than said element insulation portion, wherein said high dielectric constant film is provided only on said termination insulation portion among said element insulation portion and said termination insulation portion.