Method of detecting focus shift in lithography process, method of analyzing error of transferred pattern using the same and method of manufacturing semiconductor device using the methods

摘要

A method of detecting focus shift in a lithography process, a method of analyzing an error of a transferred pattern using the same, and a method of manufacturing a semiconductor device using the methods are provided. The focus shift detecting method of a lithography process comprises generating a first contour band of a mask pattern between a first focus and a second focus, generating a second contour of the mask pattern between the first focus and a third focus, and determining whether focus shift of the mask pattern occurs using an intersection of the first contour band and the second contour band.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
providing a semiconductor substrate; forming a photosensitive layer on the semiconductor substrate; exposing a light pattern on the photosensitive layer using a photomask and an exposure apparatus; and developing the photosensitive layer to form photosensitive pattern, wherein a pattern of the photomask or a parameter of the exposure apparatus is adjusted using a focus shift detecting method, and the focus shift detecting method comprises;
generating a first contour band of a mask pattern between a first focus and a second focus;generating a second contour band of the mask pattern between the first focus and a third focus; anddetermining whether focus shift of the mask pattern occurs based on an intersection of the first contour band and the second contour band.