Method of manufacturing a semiconductor device

摘要

Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a method of manufacturing a semiconductor device includes: providing a workpiece having a recess and a dielectric layer lining the recess; forming a conductive structure within the recess, wherein the conductive structure partially fills the recess; and recessing the dielectric layer, wherein, after the recessing, a top surface of the recessed dielectric layer is disposed within the recess.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
providing a workpiece having a recess and a dielectric layer having a first portion lining the recess and a second portion lining a top surface of the workpiece; forming a conductive structure within the recess, wherein: the conductive structure partially fills the recess; the conductive structure comprises topmost lateral extents disposed within the recess; and formation of the conductive structure leaves the second portion of the dielectric layer exposed; and after forming the conductive structure, removing the second portion of the dielectric layer and exposed regions of the first portion of the dielectric layer, wherein, after the removing, a top surface of the recessed dielectric layer is disposed within the recess, and the recessed dielectric layer is substantially coplanar with a to surface of the conductive structure formed within the recess.