Method of forming fine patterns in an anti-reflection layer for use as a patterning hard mask

摘要

Provided is a method of fabricating a semiconductor device. The method includes forming an anti-reflection layer on a lower layer, forming photoresist patterns on the anti-reflection layer, forming protection patterns to cover the photoresist patterns, respectively, etching the anti-reflection layer using the photoresist patterns covered with the protection patterns as an etch mask to form anti-reflection patterns, forming spacers to cover sidewalls of the anti-reflection patterns, and removing the anti-reflection patterns.

主权项

1. A method of fabricating a semiconductor device, comprising:
forming an anti-reflection layer on a lower layer; forming photoresist patterns on the anti-reflection layer; forming protection patterns to cover the photoresist patterns, respectively; etching the anti-reflection layer using the photoresist patterns covered with the protection patterns as an etch mask to form anti-reflection patterns; forming spacers to cover sidewalls of the anti-reflection patterns, the forming the spacers including,
forming a preliminary spacer layer to conformally cover the anti-reflection patterns, andanisotropically etching the preliminary spacer layer to expose top surfaces of the anti-reflection patterns and a top surface of the lower layer; and removing the anti-reflection patterns.