Magnetic memory cells with fast read/write speed

摘要

Memory cells and methods for forming a memory cell are presented. The memory cell includes a storage unit and a selector unit. The storage unit includes a magnetic storage element with first and second storage terminals and a bitline coupled to the second storage terminal. The selector unit includes a first selector and a second selector. The first selector may be a tunneling select transistor or a metal oxide semiconductor select transistor. The second tunneling select transistor is configured to have a second unidirectional current flow between its source and drain terminals. The second selector serves at least as a read selector for read operations of the memory cell and a read current is in the direction of the second unidirectional current flow between the source drain terminals of the second selector.

主权项

1. A memory cell comprising:
a storage unit, the storage unit comprises
a magnetic storage element with first and second storage terminals;a bitline coupled to the second storage terminal; a selector unit, the selector unit comprises
a first selector having a first select transistor having a first drain terminal, a first source terminal and a first control terminal, wherein
the first drain terminal is coupled to the first storage terminal,the first source terminal is coupled to a source line,the first control terminal is coupled to a first control wordline,a second selector comprises a second select transistor which is a second tunneling select transistor having a second drain terminal, a second source terminal and a second control terminal, wherein
the second drain terminal is coupled to the first storage terminal,the second source terminal is coupled to the source line,the second control terminal is coupled to a second control wordline,the second tunneling select transistor is configured to have a second unidirectional current flow between the second source and second drain terminals, wherein the second selector serves at least as a read selector for read operations of the memory cell and a read current is in the direction of the second unidirectional current flow between the second source and second drain terminals.