Reusable semiconductor substrates

摘要

In example implementations, a plurality of material layers and a plurality of etch stop layers are grown on a first substrate. Ions are implanted through at least one material layer of the plurality of material layers into an etch stop layer of the plurality of etch stop layers to create defects in the etch stop layer. A first material layer of the substrate is bonded to a second substrate. The etch stop layer is split to remove the first substrate from the second substrate. The first substrate is reused to bond another material layer of the plurality of material layers to a third substrate.

主权项

1. A composite substrate, comprising:
a first substrate; and a second substrate comprising a stack that is bonded to the first substrate, wherein the first substrate includes a trench on a surface that bonds to the second substrate, wherein the stack comprises a plurality of material layers having an etch stop layer between each one of the plurality of material layers, wherein an etch stop layer that is closest to the first substrate comprises defects caused by an ion implantation process, wherein the etch stop layer that is closest to the first substrate is split at the defects such that a plurality of remaining material layers of the second substrate is reusable for bonding to another substrate.