| 发明名称 | Method for forming isolation member in trench of semiconductor substrate | ||
| 摘要 | A method for forming an isolation member in a trench of a substrate may include the following steps: performing a first deposition process to form a first isolation material set, which is at least partially positioned in the trench; partially removing the first isolation material set, such that a remaining portion of the first isolation material set remains in the trench; after the first isolation material set has been partially removed, performing a fluorine-reduction process on at least the remaining portion of the first isolation material set; after the fluorine-reduction process, performing a second deposition process to form a second isolation material set, which is at least partially positioned in the trench, wherein the second isolation material set includes the remaining portion of the first isolation material set; and processing the second isolation material set for forming the isolation member. | ||
| 申请公布号 | US9570338(B2) | 申请公布日期 | 2017.02.14 |
| 申请号 | US201514703181 | 申请日期 | 2015.05.04 |
| 申请人 | SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION | 发明人 | Yan Yan;Yang Jun |
| 分类号 | H01L21/762;H01L21/3105 | 主分类号 | H01L21/762 |
| 代理机构 | Innovation Counsel LLP | 代理人 | Innovation Counsel LLP |
| 主权项 | 1. A method for forming an isolation member in a trench of a substrate, the method comprising: performing a first deposition process to form a first isolation material set, which is at least partially positioned in the trench; partially removing the first isolation material set, such that a remaining portion of the first isolation material set remains in the trench; after the first isolation material set has been partially removed, performing a first fluorine-reduction process on at least the remaining portion of the first isolation material set; after the first fluorine-reduction process has been performed, performing a second deposition process to form a second isolation material set, which is at least partially positioned in the trench and includes the remaining portion of the first isolation material set; and performing a polishing process to partially remove the second isolation material set, such that a remaining portion of the second isolation material set forms the isolation member, wherein a difference between maximum isolation material height and a minimum isolation material height above a bottom side of the substrate is less than or equal to 200 angstroms before the polishing process. | ||
| 地址 | CN | ||