发明名称 On chip characterization of timing parameters for memory ports
摘要 A circuit and method for memory characterization. The circuit includes first and second programmable delay lines, address and data registers, an output register and a finite state machine controller. The finite state machine controller supplies an address to the address register, data to the data register and controlling a delay of the first programmable delay line and the second programmable delay line in at least one predetermined sequence to determine an operating characteristic of the memory to be tested. The programmable delay lines may be connected as a ring oscillator. Determination of the frequency of the ring oscillator via a counter determines the delay of the delay line. The programmable delay lines, the address register and data registers, the output register, the finite state machine controller and the memory to be tested are preferably constructed on a same semiconductor substrate.
申请公布号 US9570195(B2) 申请公布日期 2017.02.14
申请号 US201514635204 申请日期 2015.03.02
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 Kashyap Abhijith Ramesh;Pundoor Shrikrishna
分类号 G11C7/00;G11C29/02 主分类号 G11C7/00
代理机构 代理人 Marshall, Jr. Robert D.;Cimino Frank D.
主权项 1. A memory characterization circuit comprising: a first programmable delay line having an input receiving a system clock signal and an output; a second programmable delay line having an input connected to said output of said first programmable delay line and an output; an address register having a plurality of address memory elements for storing an address, each address memory element having an input receiving a corresponding address input bit, an output supplying a stored address bit and a clock input connected to said output of said second programmable delay line, each address memory element storing an address bit corresponding to said address input bit upon a predetermined edge of said output of said second programmable delay line at said clock input, said output of each address memory element connected to a corresponding address bit input of a memory to be tested; a data register having a plurality of data memory elements for storing data, each data memory element having an input receiving a corresponding data input bit, an output supplying a stored data bit and a clock input connected to said output of said second programmable delay line, each data memory element storing a data bit corresponding to said data input bit upon a predetermined edge of said output of said second programmable delay line at said clock input, said output of each data memory element connected to a corresponding data bit input of a memory to be tested; an output register having a plurality of output memory elements for storing data, each output memory element having an input receiving a corresponding data output bit of the memory to be tested, an output supplying a stored data bit and a clock input receiving said system clock signal, each output memory element storing a data bit corresponding to said data output bit of the memory to be tested upon a predetermined edge of the system clock signal at said clock input, said output of each output memory element connected to a corresponding data bit input of a memory to be tested; a finite state machine controller supplying an address to said address register, data to said data register and controlling a delay of said first programmable delay line and said second programmable delay line in at least one predetermined sequence to determine an operating characteristic of the memory to be tested.
地址 Dallas TX US