| 摘要 |
The sensor (10) has a source electrode (18), a drain electrode (20) and a gate electrode (22) arranged on a substrate (12). Electrical insulating layers (24, 26) are arranged between the substrate and the gate electrode, where one of the electrical insulating layers includes a fluctuation margin with thickness larger or equal to quarters of overall thickness of the insulating layers. The other electrical insulating layer comprises a ceramic material, and the gate electrode is configured through applied electrical conductive particles e.g. metallic nanoparticles, on the former insulating layer. The electrical insulating layer is configured as a multi-layer system. The ceramic material comprises a substance that is selected from a group consisting of silicon-based materials, aluminum-based materials and/or oxides, nitrides and carbide. An independent claim is also included for a method for manufacturing a gas sensor. |
