发明名称 IMAGE PICKUP ELEMENT, METHOD OF MANUFACTURING IMAGE PICKUP ELEMENT, AND ELECTRONIC APPARATUS
摘要 An image pickup element includes: a semiconductor substrate including a photoelectric conversion section for each pixel; a pixel separation groove provided in the semiconductor substrate; and a fixed charge film provided on a light-receiving surface side of the semiconductor substrate, wherein the fixed charge film includes a first insulating film and a second insulating film, the first insulating film being provided contiguously from the light-receiving surface to a wall surface and a bottom surface of the pixel separation groove, and the second insulating film being provided on a part of the first insulating film, the part corresponding to at least the light-receiving surface.
申请公布号 US2017040359(A1) 申请公布日期 2017.02.09
申请号 US201615299220 申请日期 2016.10.20
申请人 Sony Corporation 发明人 Manda Shuji;Hiyama Susumu;Shiga Yasuyuki
分类号 H01L27/146;H04N5/378 主分类号 H01L27/146
代理机构 代理人
主权项 1. An electronic apparatus comprising: an imaging device including: a semiconductor substrate having a first side and a second side;a photoelectric conversion section disposed in the semiconductor substrate;a pixel separation groove disposed in the semiconductor substrate and adjacent to the photoelectric conversion section;a plurality of insulating films disposed adjacent to the first side of the semiconductor substrate; anda silicon oxide film,wherein each insulating film of the plurality of insulating films includes at least one member selected from the group consisting of: hafnium oxide, zirconium oxide, aluminum oxide, titanium oxide, and tantalum oxide, the silicon oxide film contacts a surface of a first insulating film of the plurality of insulating films and a surface of a second insulating film of the plurality of insulating films,the first insulating film of the plurality of insulating films is disposed inside of the pixel separation groove,a thickness of at least a portion of the second insulating film of the plurality of insulating films is greater than or equal to 10 nm and less than or equal to 80 nm, andthe first insulating film of the plurality of insulating films and the second insulating film of the plurality of insulating films are made of a same material; a signal processing section configured to process a signal received from the imaging device; and an optical system including at least one optical lens, wherein the optical system is configured to guide light to the imaging device.
地址 Tokyo JP