发明名称 |
MIM CAPACITOR FORMATION IN RMG MODULE |
摘要 |
A method is provided for forming a metal-insulator-metal capacitor in a replacement metal gate module. The method includes providing a gate cap formed on a gate. The method further includes removing a portion of the gate cap and forming a recess in the gate. A remaining portion of the gate forms a first electrode of the capacitor. The method also includes depositing a dielectric on remaining portions of the gate cap and the remaining portion of the gate. The method additionally includes depositing a conductive material on the dielectric. The method further includes removing a portion of the conductive material and portions of the dielectric to expose a remaining portion of the conductive material and a remaining portion of the dielectric. The remaining portion of the conductive material forms a second electrode of the capacitor. The remaining portion of the dielectric forms an insulator of the capacitor. |
申请公布号 |
US2017040314(A1) |
申请公布日期 |
2017.02.09 |
申请号 |
US201615222612 |
申请日期 |
2016.07.28 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Basker Veeraraghavan S.;Cheng Kangguo;Standaert Theodorus E.;Wang Junli |
分类号 |
H01L27/06;H01L29/40;H01L21/28;H01L49/02 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
1. A method for forming a metal-insulator-metal capacitor in a replacement metal gate module, comprising:
providing a gate cap formed on a gate; forming a plurality of recesses by forming a plurality of voids in the gate cap and forming a plurality of gate recesses in the gate under the plurality of voids, a remaining portion of the gate forming a first electrode of the capacitor; depositing a dielectric on remaining portions of the gate cap and the remaining portion of the gate; depositing a conductive material on the dielectric; and removing a plurality of portions of the dielectric and a remaining portion of the conductive material to expose a plurality of remaining portions of the dielectric and a plurality of remaining portions of the conductive material, the plurality of remaining portions of the dielectric forming at least a portion of an insulator of the capacitor and the plurality of remaining portions of the conductive material forming a second electrode of the capacitor. |
地址 |
Armonk NY US |