发明名称 |
WAVEGUIDE-COUPLED SILICON-GERMANIUM PHOTODETECTORS AND FABRICATION METHODS FOR SAME |
摘要 |
A waveguide-coupled Silicon Germanium (SiGe) photodetector. A p-n silicon junction is formed in a silicon substrate by an n-doped silicon region and a p-doped silicon region, a polysilicon rib is formed on the silicon substrate to provide a waveguide core for an optical mode of radiation, and an SiGe pocket is formed in the silicon substrate along a length of the polysilicon rib and contiguous with the p-n silicon junction. An optical mode of radiation, when present, substantially overlaps with the SiGe pocket so as to generate photocarriers in the SiGe pocket. An electric field arising from the p-n silicon junction significantly facilitates a flow of the generated photocarriers through the SiGe pocket. In one example, such photodetectors have been fabricated using a standard CMOS semiconductor process technology without requiring changes to the process flow (i.e., “zero-change CMOS”). |
申请公布号 |
US2017040469(A1) |
申请公布日期 |
2017.02.09 |
申请号 |
US201615332872 |
申请日期 |
2016.10.24 |
申请人 |
Alloatti Luca |
发明人 |
Alloatti Luca |
分类号 |
H01L31/0232;G02B6/12;H01L31/103 |
主分类号 |
H01L31/0232 |
代理机构 |
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代理人 |
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主权项 |
1. A photodetector apparatus, comprising:
a silicon substrate; an n-doped well-implant region formed in the silicon substrate; a p-doped well-implant region formed in the silicon substrate and contiguous with the n-doped well-implant region so as to form a p-n junction between the p-doped well-implant region and the n-doped well-implant region; and a Silicon Germanium (SiGe) region formed within both the n-doped well-implant region and the p-doped well-implant region such that the p-n junction is contiguous with the SiGe region. |
地址 |
Staefa CH |