发明名称 THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND DISPLAY DEVICE
摘要 The present disclosure relates to the field of manufacturing technologies for semiconductor devices and provides a thin film transistor and a manufacturing method thereof, an array substrate and a display device. The thin film transistor includes: an active layer located on a plane; a source electrode, which is located on the active layer and is in contact with the active layer; a first insulation layer located on the source electrode and including a first via hole; and a drain electrode located on the first insulation layer, where the drain electrode is in contact with the active layer via the first via hole.
申请公布号 US2017040466(A1) 申请公布日期 2017.02.09
申请号 US201514914228 申请日期 2015.08.10
申请人 BOE TECHNOLOGY GROUP CO., LTD. 发明人 ZHANG Li
分类号 H01L29/786;H01L29/423;H01L29/40;H01L29/417 主分类号 H01L29/786
代理机构 代理人
主权项 1. A thin film transistor, comprising: an active layer located on a plane; a source electrode, which is located on the active layer and is in contact with the active layer; a first insulation layer located on the source electrode and comprising a first via hole; and a drain electrode located on the first insulation layer, wherein the drain electrode is in contact with the active layer via the first via hole.
地址 Beijing CN