发明名称 |
THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND DISPLAY DEVICE |
摘要 |
The present disclosure relates to the field of manufacturing technologies for semiconductor devices and provides a thin film transistor and a manufacturing method thereof, an array substrate and a display device. The thin film transistor includes: an active layer located on a plane; a source electrode, which is located on the active layer and is in contact with the active layer; a first insulation layer located on the source electrode and including a first via hole; and a drain electrode located on the first insulation layer, where the drain electrode is in contact with the active layer via the first via hole. |
申请公布号 |
US2017040466(A1) |
申请公布日期 |
2017.02.09 |
申请号 |
US201514914228 |
申请日期 |
2015.08.10 |
申请人 |
BOE TECHNOLOGY GROUP CO., LTD. |
发明人 |
ZHANG Li |
分类号 |
H01L29/786;H01L29/423;H01L29/40;H01L29/417 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
1. A thin film transistor, comprising:
an active layer located on a plane; a source electrode, which is located on the active layer and is in contact with the active layer; a first insulation layer located on the source electrode and comprising a first via hole; and a drain electrode located on the first insulation layer, wherein the drain electrode is in contact with the active layer via the first via hole. |
地址 |
Beijing CN |