发明名称 METHOD OF FABRICATING SEMICONDUCTOR DEVICE
摘要 A semiconductor device may be manufactured based on patterning groups to include a metal layer patterned according to separate patterning groups. The patterning groups may be based on a layout pattern. Preparing the layout pattern may include selecting first and second power patterns, selecting first and second patterns therebetween, and selecting a tie-connection pattern to connect the first power pattern to the first pattern. The manufacturing may include forming metal lines according to the patterning groups. Photomasks may be manufactured according to the layout pattern, and the metal lines may be formed according to the photomasks. A first photomask may be manufactured based on the first and second power patterns, the first pattern, and the tie-connection pattern, and a second photomask may be manufactured based on the second pattern.
申请公布号 US2017039300(A1) 申请公布日期 2017.02.09
申请号 US201615079640 申请日期 2016.03.24
申请人 Samsung Electronics Co., Ltd. 发明人 BAE Sungmin;KIM Tae-Il
分类号 G06F17/50 主分类号 G06F17/50
代理机构 代理人
主权项 1. A method of manufacturing a semiconductor device, comprising: preparing a layout pattern, the preparing including, selecting first and second power patterns,selecting first and second patterns between the first and second power patterns; andselecting a tie-connection pattern connecting the first power pattern to the first pattern; manufacturing a first photomask based on the first and second power patterns, the first pattern, and the tie-connection pattern; manufacturing a second photomask based on the second pattern; and forming one or more metal lines on a substrate according to the first and second photomasks.
地址 Suwon-si KR