Silicon Micromachined Hemispherical Resonance Gyroscope and Processing Method Thereof

摘要

The present invention relates to a micromachined hemispherical resonance gyroscope, which comprises a resonant layer, said resonant layer comprising a hemispherical shell which has a concave inner surface and an outer surface opposite to the inner surface, and top point of the hemispherical shell being its anchor point; several silicon hemispherical electrodes being arranged around said hemispherical shell, the silicon hemispherical electrodes including driving electrodes, equilibrium electrodes, signal detection electrodes and shielded electrodes, the shielded electrodes separating the driving electrodes and the equilibrium electrodes from the signal detection electrodes, the hemispherical shell and the several silicon spherical electrodes which surround the hemispherical shell constituting several capacitors; the resonant layer being made of polysilicon or silica or silicon oxide or diamond. The hemispherical resonance micromechanical gyroscope utilizes a processing method on the basis of silicon micromachining, which leads to small size and low production cost, as well as batch production capacity, meanwhile its sensitivity is independent of amplitude and its driving voltage could be very low, as a result its output noise could be significantly reduced, and its accuracy is better than the gyroscope products in the prior art.

主权项

1. A hemispherical resonance micromechanical gyroscope, comprising a resonant layer,
said resonant layer comprising
a hemispherical shell being made of polysilicon or silica or silicon oxide or diamond; andseveral silicon spherical electrodes being arranged around said hemispherical shell, said silicon spherical electrodes including driving electrodes, equilibrium electrodes, signal detection electrodes and shielded electrodes, said shielded electrodes separating said driving electrodes and said equilibrium electrodes from said signal detection electrodes, and said shielded electrodes converging at a point and the converging point being anchor point of said hemispherical shell, said hemispherical shell and said several silicon spherical electrodes which surround the hemispherical shell constituting several capacitors,wherein the silicon hemispherical electrodes is formed by etching deep grooves on the silicon wafer by means of lithography and DRIE dry etch with V-shaped groove lithography board being utilized during etch to make the width of said deep grooves be proportional to the thickness of said silicon wafer, i.e. the window width of the deep grooves close to the anchor point is relatively narrow, and the window width of the deep grooves close to the edge of the hemispherical shell is relatively wide.