| 摘要 |
The present invention addresses the problem of providing a sheet-type metamaterial having a film structure that achieves a Figure of Merit (FOM) exceeding 300 in the terahertz waveband. A first wire array 10 is formed on the surface of a film-form dielectric substrate 12, and a second wire array 11 is formed on the back surface of the dielectric substrate 12. The first wire array 10 is composed of long, thin first cut wires 10a made of metal and having a length l, the first cut wires 10a being arranged aligned in the y-axis direction at an interval g, and in the x-axis direction at an interval s, and the second wire array 11 is composed of second cut wires 11a formed in the same shape, so as to overlap the first cut wires 10a. The thickness d of the dielectric substrate 12 is approximately 50 µm, and the length l of the first cut wires 10a and the second cut wires 11a is a length that is approximately resonant at the design frequency. |
