| 发明名称 |
METROLOGY APPARATUS FOR A SEMICONDUCTOR PATTERN, METROLOGY SYSTEM INCLUDING THE SAME AND METROLOGY METHOD USING THE SAME |
| 摘要 |
A metrology method includes obtaining a pattern reflection light reflected from an object by irradiating a first divided light, which is generated by reflecting a polarized light, to the object; obtaining a phase-controlled mirror reflection light reflected from a reflector by irradiating a second divided light, which is generated by transmitting the polarized light, to the reflector; and obtaining a pattern of the object based on an interference signal between the pattern reflection light and the mirror reflection light. |
| 申请公布号 |
US2017038194(A1) |
申请公布日期 |
2017.02.09 |
| 申请号 |
US201514950174 |
申请日期 |
2015.11.24 |
| 申请人 |
SK hynix Inc. |
发明人 |
KANG Yoon Shik;MA Seong Min;HAHN Joon Seong |
| 分类号 |
G01B11/24;G01B9/02;G02F1/01;G02B27/28;G02B5/30 |
主分类号 |
G01B11/24 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A metrology method comprising:
obtaining a pattern reflection light reflected from an object by irradiating a first divided light, which is generated by reflecting a polarized light, to the object; obtaining a phase-controlled mirror reflection light reflected from a reflector by irradiating a second divided light, which is generated by transmitting the polarized light, to the reflector; and obtaining a pattern of the object based on an interference signal between the pattern reflection light and the mirror reflection light. |
| 地址 |
Gyeonggi-do KR |
