PHOTOELECTRIC CONVERSION ELEMENT, IMAGING DEVICE, AND METHOD FOR PRODUCING PHOTOELECTRIC CONVERSION ELEMENT

摘要

Provided is a photoelectric conversion element containing a photoelectric conversion layer having a flat upper surface. Also provided is an imaging device containing a photoelectric conversion layer having a flat upper surface. Provided is an imaging device having outstanding imaging performance. Also provided is an imaging device having small variation between pixels. Also provided is an imaging device having a high degree of integration. The photoelectric conversion element comprises a first electrode, a photoelectric conversion layer on the first electrode, a hole injection barrier layer on the photoelectric conversion layer, and a second electrode on the hole injection barrier layer, wherein the first electrode contains Ti, the second electrode contains indium tin oxide, the photoelectric conversion layer contains crystalline selenium, the hole injection barrier layer contains gallium oxide or an In-Ga-Zn oxide, and at least part of the upper surface of the photoelectric conversion layer has an average surface roughness (Ra) not exceeding 20nm.