摘要 |
A process for growing nanowires or nanopyramids comprising: (I) providing a graphitic substrate and depositing AlGaN, InGaN, AlN or AlGa(In)N on said graphitic substrate at an elevated temperature to form a buffer layer or nanoscale nucleation islands of said compounds; (II) growing a plurality of semiconducting group III-V nanowires or nanopyramids, preferably Ill-nitride nanowires or nanopyramids, on the said buffer layer or nucleation islands on the graphitic substrate, preferably via MOVPE or MBE. |
申请人 |
CRAYONANO AS;NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (NTNU) |
发明人 |
KIM, Dong-Chul;HØIAAS, Ida Marie;MUNSHI, Mazid;FIMLAND, Bjørn Ove;WEMAN, Helge;REN, Dingding;DHEERAJ, Dasa |