SILICON PHOTONICS DEVICE AND COMMUNICATION SYSTEM THEREFOR

摘要

A silicon photonics device and system therefor. The silicon photonics device can include a 300 nm SOI (silicon-on-insulator with 300 nm top Si) overlying a substrate member. A waveguide structure can be configured from a portion of the SOI layer and disposed overlying the substrate member. This waveguide structure can include an AWG (Arrayed Waveguide Gratings) structure with 300 nm×300 nm symmetric grating waveguides or an Echelle grating structure characterized by a top silicon thickness of 300 nm. The waveguide structure can also include an index compensator material configured to provide at least two material index ratings in the waveguide structure.

主权项

1. A silicon photonics device comprising:
a substrate member; an interface for receiving an input, the input including a transverse electric (TE) component and a transverse magnetic (TM) component; a polarization beam splitter (PBS) overlying the substrate member, the PBS being configured to split the input into a TE output and a TM output, the TE output comprising the TE component, the TM output comprising the TM component; a TE optimized demultiplexer (demux) overlying the substrate member, the TE optimized demux having a TE demux input coupled to the TE output, the TE optimized demux having a plurality of TE demux outputs, the TE optimized demux comprising a 300 nm×300 nm waveguide structure; a TM optimized demux overlying the substrate member, the TM optimized demux having a TM demux input coupled to the TM output, the TM optimized demux having a plurality of TM demux outputs; a plurality of paths including a first pair of paths and a second pair of paths; a plurality of polarization beam combiners (PBC) including a first PBC and a second PBC, the first PBC being coupled to a first TE demux output and a first TM demux output via the first pair of paths, the first pair of paths being characterized by a first symmetrical length, the first PBC being configured to provide a first TE+TM output; and a plurality of photodiode (PD) structures overlying the substrate, the plurality of PD structures including a first PD and a second PD, the first PD being coupled to the first PBC output.