| 发明名称 |
SINGLE CRYSTAL DIAMOND |
| 摘要 |
A method of producing a large area plate of single crystal diamond from CVD diamond grown on a substrate substantially free of surface defects by chemical vapour deposition (CVD). The homoepitaxial CVD grown diamond and the substrate are severed transverse to the surface of the substrate on which diamond growth took place to produce the large area plate of single crystal CVD diamond. |
| 申请公布号 |
US2017037539(A1) |
申请公布日期 |
2017.02.09 |
| 申请号 |
US201615298380 |
申请日期 |
2016.10.20 |
| 申请人 |
ELEMENT SIX TECHNOLOGIES LIMITED |
发明人 |
SCARSBROOK GEOFFREY ALAN;MARTINEAU PHILIP MAURICE;TWITCHEN DANIEL JAMES |
| 分类号 |
C30B29/04;C30B25/20 |
主分类号 |
C30B29/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A (001) single crystal CVD diamond plate having major surfaces on opposite sides thereof bounded by {100} side surfaces, each major surface having at least one linear dimension exceeding 10 mm. |
| 地址 |
DIDCOT GB |
