METHOD OF PRODUCING SiC SINGLE CRYSTAL

摘要

When producing an SiC single crystal with a solution method, a crucible having SiC as the primary component and having an oxygen content of no greater than 100 ppm is used as the crucible that serves as a housing unit of an Si-C solution. In another embodiment, a sintered body having SiC as the primary component and having an oxygen content of no greater than 100 ppm is housed inside of the crucible serving as the housing unit of an Si-C solution. In both cases, SiC, the primary component, becomes a source of Si and C, which elute into the Si-C solution through heating, and since the oxygen content is no greater than 100 ppm, the generation of gas in the Si-C solution is suppressed. As a result, SiC single crystals with few defects and high quality can be produced stably and over a long period of time.