发明名称 |
Side Interconnect for Light Emitting Device |
摘要 |
Embodiments of the invention include a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A metal n-contact is connected to the n-type region. A metal p-contact is in direct contact with the p-type region. An interconnect is electrically connected to one of the n-contact and the p-contact. The interconnect is disposed adjacent to the semiconductor structure. |
申请公布号 |
US2017040517(A1) |
申请公布日期 |
2017.02.09 |
申请号 |
US201615296935 |
申请日期 |
2016.10.18 |
申请人 |
Koninklijke Philips N.V. |
发明人 |
Lopez Toni;Butterworth Mark Melvin;Mihopoulos Theodoros |
分类号 |
H01L33/62;H01L33/46;H01L33/40;H01L33/38 |
主分类号 |
H01L33/62 |
代理机构 |
|
代理人 |
|
主权项 |
1. A light emitting device comprising:
a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region; a conductive growth substrate in direct contact with the semiconductor structure; a metal n-contact connected to the n-type region and a metal p-contact in direct contact with the p-type region; and an interconnect in direct contact with one of the n-contact and the p-contact, wherein the interconnect is disposed adjacent to the semiconductor structure. |
地址 |
Eindhoven NL |