| 发明名称 |
SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
A method of manufacturing a semiconductor light emitting device is provided. The method includes forming a first region of a lower semiconductor layer on a substrate, etching an upper surface of the first region using at least one gas used in forming the first region, in-situ in a chamber in which a process of forming the first region has been performed, forming a second region of the lower semiconductor layer on the first region, forming an active layer on the lower semiconductor layer, and forming an upper semiconductor layer on the active layer. |
| 申请公布号 |
US2017040490(A1) |
申请公布日期 |
2017.02.09 |
| 申请号 |
US201615172976 |
申请日期 |
2016.06.03 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE Jin Sub;KIM Jung Sub |
| 分类号 |
H01L33/12;H01L33/40;H01L33/04;H01L33/32;H01L33/22;H01L33/00 |
主分类号 |
H01L33/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a semiconductor light emitting device, the method comprising:
forming a first region of a lower semiconductor layer on a substrate; etching an upper surface of the first region using at least one gas used in forming the first region, in-situ in a chamber in which a process of forming the first region has been performed; forming a second region of the lower semiconductor layer on the first region; forming an active layer on the lower semiconductor layer; and forming an upper semiconductor layer on the active layer. |
| 地址 |
Suwon-si KR |
