FERROELECTRIC MEMORY DEVICE AND FABRICATION METHOD THEREOF

摘要

The disclosed technology generally relates to semiconductor devices, and more particularly to a non-volatile ferroelectric memory device and to methods of fabricating the same. In one aspect, a non-volatile memory device includes a high dielectric constant layer (high-k) layer or a metal layer on a semiconductor substrate. The non-volatile memory device additionally includes a two-dimensional (2D) semiconductor channel layer interposed between the high-k layer or metal layer and a ferroelectric layer. The non-volatile memory device additionally includes a metal gate layer on the ferroelectric layer, and further includes a source region and a drain region each electrically coupled to the 2D semiconductor channel layer.

主权项

1. A non-volatile memory device comprising:
a high dielectric constant (high-k) layer or a metal layer on a semiconductor substrate; a two-dimensional (2D) semiconductor channel layer interposed between the high-k layer or the metal layer and a ferroelectric layer; a metal gate layer on the ferroelectric layer; and a source region and a drain region each electrically coupled to the 2D semiconductor channel layer.