SEMICONDUCTOR FIN ISOLATION BY A WELL TRAPPING FIN PORTION

摘要

A bulk semiconductor substrate including a first semiconductor material is provided. A well trapping layer including a second semiconductor material and a dopant is formed on a top surface of the bulk semiconductor substrate. The combination of the second semiconductor material and the dopant within the well trapping layer is selected such that diffusion of the dopant is limited within the well trapping layer. A device semiconductor material layer including a third semiconductor material can be epitaxially grown on the top surface of the well trapping layer. The device semiconductor material layer, the well trapping layer, and an upper portion of the bulk semiconductor substrate are patterned to form at least one semiconductor fin. Semiconductor devices formed in each semiconductor fin can be electrically isolated from the bulk semiconductor substrate by the remaining portions of the well trapping layer.

主权项

1. A semiconductor structure comprising:
a semiconductor substrate including a first semiconductor material; and a fin stack structure located on said semiconductor substrate and having a pair of substantially vertical parallel sidewalls, said fin stack structure comprising:
a first semiconductor material fin portion comprising said first semiconductor material and located over said semiconductor substrate;a well trapping fin portion located over said first semiconductor material fin portion and containing a doped semiconductor material region that includes a second semiconductor material different from said first semiconductor material and a dopant of a first conductivity type; andat least one third semiconductor material fin portion comprising a third semiconductor material and located over said well trapping fin portion; and a semiconductor material portion located over said well trapping region and having a doping of a second conductivity type that is the opposite of said first conductivity type.