| 发明名称 |
SEMICONDUCTOR STRUCTURE WITH RESISTOR LAYER AND METHOD FOR FORMING THE SAME |
| 摘要 |
A semiconductor device structure including a resistor layer is provided. The semiconductor device structure includes a gate structure formed over the first region of the substrate and an inter-layer dielectric (ILD) layer formed adjacent to the gate structure. The semiconductor device structure further includes a resistor layer is formed over the ILD layer over the second region of the substrate, and the major structure of the resistor layer is amorphous. |
| 申请公布号 |
US2017040313(A1) |
申请公布日期 |
2017.02.09 |
| 申请号 |
US201514856813 |
申请日期 |
2015.09.17 |
| 申请人 |
Taiwan Semiconductor Manufacturing Co., Ltd |
发明人 |
CHEN I-Tseng;HUANG Hon-Lin;HUANG Chun-Hsien;LIN Yu-Hung |
| 分类号 |
H01L27/06;H01L21/02;H01L49/02;H01L21/8234 |
主分类号 |
H01L27/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device structure, comprising:
a substrate, wherein the substrate comprises a first region and a second region; a gate structure formed over the first region of the substrate; an inter-layer dielectric (ILD) layer formed adjacent to the gate structure; and a resistor layer is formed over the ILD layer over the second region of the substrate, wherein the major structure of the resistor layer is amorphous. |
| 地址 |
Hsinchu TW |
