发明名称 |
COMPLEMENTARY HETEROGENEOUS MOSFET USING GLOBAL SiGe SUBSTRATE AND HARD-MASK MEMORIZED GERMANIUM DILUTION FOR NFET |
摘要 |
A method includes providing a substrate that underlies a layer of SiGe; forming a plurality of fins in the layer of SiGe. Each formed fin has a fin shape and fin location preserving hard mask layer on a top surface. The method also includes depositing Si on a first subset of the set of fins in what will be an nFET area; performing a Si—Ge inter-mixing process on the first subset of fins to reduce a concentration of Ge in the first subset while producing a Si—Ge intermix layer; removing the Si—Ge intermix layer leaving the first subset of fins having the reduced concentration of Ge, and forming a second subset of fins in what will be a pFET area. The second subset is also formed from the layer of SiGe and has a greater percentage of Ge than a percentage of Ge in the first subset of fins. |
申请公布号 |
US2017040227(A1) |
申请公布日期 |
2017.02.09 |
申请号 |
US201615133525 |
申请日期 |
2016.04.20 |
申请人 |
International Business Machines Corporation |
发明人 |
Balakrishnan Karthik;Cheng Kangguo;Hashemi Pouya;Reznicek Alexander |
分类号 |
H01L21/84;H01L21/02;H01L21/324;H01L21/8238 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
1. A method, comprising:
providing a substrate that underlies a layer of SiGe; forming a plurality of fins in the layer of SiGe, each formed fin comprising a hard mask layer on a top surface; depositing Si on a first subset of the set of fins in what will be an nFET area; performing a Si—Ge inter-mixing process on the first subset of fins to reduce a concentration of Ge in the first subset of fins while producing a Si—Ge intermix layer, removing the Si—Ge intermix layer leaving the first subset of fins having the reduced concentration of Ge; and forming a second subset of fins in what will be a pFET area, the second subset of fins being formed from the layer of SiGe and having a greater percentage of Ge than a percentage of Ge in the first subset of fins. |
地址 |
Armonk NY US |