LOW TEMPERATURE ALD ON SEMICONDUCTOR AND METALLIC SURFACES

摘要

The present disclosure provides for semiconductor fabrication processes that include atomic layer depositions. Embodiments described herein provide for formation of a diffusion barrier or gate dielectric layer in preparation for subsequent ALD on semiconductor surfaces. More specifically, embodiments of the present disclosure provide for the formation of fin field effect transistor (FinFET) and metal oxide semiconductor field effect transistor (MOSFET) devices utilizing improved ALD processes.

主权项

1. An atomic layer deposition method, comprising:
heating a substrate in a reaction chamber to a temperature less than about 300° C., introducing a first precursor pulse comprising N2H4 into the reaction chamber; and introducing a second precursor pulse comprising Si2Cl6 into the reaction chamber, wherein the first precursor pulse and the second precursor pulse are performed at the temperature less than about 300° C.