发明名称 TRANSPARENT CONDUCTIVE FILM AND METHOD FOR PRODUCING THE SAME
摘要 There is provided a transparent conductive film achieving low resistance characteristics of a transparent conductive layer. The present invention provides a transparent conductive film including: a polymer film substrate; and a transparent conductive layer formed on at least one surface of the polymer film substrate by means of a sputtering method using a sputtering gas including argon, wherein an existing atomic amount of argon atoms in the transparent conductive layer is 0.24 atomic % or less; an existing atomic amount of hydrogen atoms in the transparent conductive layer is 13×1020 atoms/cm3 or less; and the transparent conductive layer has a specific resistance of 1.1×10−4 Ω·cm or more and 2.8×10—4 Ω·cm or less.
申请公布号 US2017038889(A1) 申请公布日期 2017.02.09
申请号 US201514914108 申请日期 2015.04.28
申请人 NITTO DENKO CORPORATION 发明人 Fujino Nozomi;Nashiki Tomotake;Kato Daiki;Machinaga Hironobu;Sasa Kazuaki;Ueda Eri;Matsuda Tomoya
分类号 G06F3/041;C23C14/35;G06F3/045;H01B5/14;G06F3/044;C23C14/08;C23C14/58 主分类号 G06F3/041
代理机构 代理人
主权项 1. A transparent conductive film comprising: a polymer film substrate; and a transparent conductive layer formed on at least one surface of the polymer film substrate by means of a sputtering method using a sputtering gas including argon, wherein: an existing atomic amount of argon atoms in the transparent conductive layer is 0.24 atomic % or less; an existing atomic amount of hydrogen atoms in the transparent conductive layer is 13×1020 atoms/cm3 or less; and the transparent conductive layer has a specific resistance of 1.1×10−4 Ω·cm or more and 2.8×10−4 Ω·cm or less.
地址 Osaka JP