发明名称 |
TRANSPARENT CONDUCTIVE FILM AND METHOD FOR PRODUCING THE SAME |
摘要 |
There is provided a transparent conductive film achieving low resistance characteristics of a transparent conductive layer. The present invention provides a transparent conductive film including: a polymer film substrate; and a transparent conductive layer formed on at least one surface of the polymer film substrate by means of a sputtering method using a sputtering gas including argon, wherein an existing atomic amount of argon atoms in the transparent conductive layer is 0.24 atomic % or less; an existing atomic amount of hydrogen atoms in the transparent conductive layer is 13×1020 atoms/cm3 or less; and the transparent conductive layer has a specific resistance of 1.1×10−4 Ω·cm or more and 2.8×10—4 Ω·cm or less. |
申请公布号 |
US2017038889(A1) |
申请公布日期 |
2017.02.09 |
申请号 |
US201514914108 |
申请日期 |
2015.04.28 |
申请人 |
NITTO DENKO CORPORATION |
发明人 |
Fujino Nozomi;Nashiki Tomotake;Kato Daiki;Machinaga Hironobu;Sasa Kazuaki;Ueda Eri;Matsuda Tomoya |
分类号 |
G06F3/041;C23C14/35;G06F3/045;H01B5/14;G06F3/044;C23C14/08;C23C14/58 |
主分类号 |
G06F3/041 |
代理机构 |
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代理人 |
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主权项 |
1. A transparent conductive film comprising:
a polymer film substrate; and a transparent conductive layer formed on at least one surface of the polymer film substrate by means of a sputtering method using a sputtering gas including argon, wherein: an existing atomic amount of argon atoms in the transparent conductive layer is 0.24 atomic % or less; an existing atomic amount of hydrogen atoms in the transparent conductive layer is 13×1020 atoms/cm3 or less; and the transparent conductive layer has a specific resistance of 1.1×10−4 Ω·cm or more and 2.8×10−4 Ω·cm or less. |
地址 |
Osaka JP |