ELECTRODE CONTACTS

摘要

A device structure providing contact to conductive layers via a deep trench structure is disclosed. The device includes a first dielectric layer including a first opening. A first conductive layer is deposited over the first dielectric layer and the first opening. A second dielectric layer is deposited on the first conductive layer. The second dielectric layer includes a second opening. A second conductive layer is deposited over the second dielectric layer and the first and second openings. A semiconductor layer is deposited on the second dielectric layer such that the semiconductor layer is not continuous on at least part of the walls of the first or second openings. A top electrode layer is deposited on the semiconductor layer. The top electrode layer is in contact with the second conductive layer on at least part of the walls of the first or second openings.

主权项

1. A device structure providing contact to conductive layers via a deep trench structure, the device structure comprising:
a first dielectric layer including a first opening, the first opening having walls on the first dielectric layer; a first conductive layer deposited over the first dielectric layer and the first opening; a second dielectric layer deposited on the first conductive layer, the second dielectric layer including a second opening having walls on the second dielectric layer; a second conductive layer deposited over the second dielectric layer and the first and second openings; a semiconductor layer deposited on the second dielectric layer such that the semiconductor layer is not continuous on at least part of the walls of the first or second openings; and a top electrode layer deposited on the semiconductor layer, the top electrode layer in contact with the second conductive layer on at least part of the walls of the first or second openings.