METHOD FOR MANUFACTURING NANO-STRUCTURED SEMICONDUCTOR LIGHT-EMITTING ELEMENT

摘要

There is provided a method for manufacturing a nanostructure semiconductor light emitting device, including: forming a mask having a plurality of openings on a base layer; growing a first conductivity-type semiconductor layer on exposed regions of the base layer such that the plurality of openings are filled, to form a plurality of nanocores; partially removing the mask such that side surfaces of the plurality of nanocores are exposed; heat-treating the plurality of nanocores after partially removing the mask; sequentially growing an active layer and a second conductivity-type semiconductor layer on surfaces of the plurality of nanocores to form a plurality of light emitting nanostructures, after the heat treatment; and planarizing upper parts of the plurality of light emitting nanostructures such that upper surfaces of the nanocores are exposed.

主权项

1. A core-shell structure semiconductor light emitting device, comprising:
a base layer including a first conductivity type semiconductor; an insulating layer disposed on the base layer and having a plurality of openings through which regions of the base layer are exposed; a plurality of light emitting core-shell structures respectively disposed on the exposed regions of the base layer and each of the plurality of light emitting core-shell structures having a core including a first conductivity type semiconductor and having a side surface and a upper surface, and a shell including an active layer and a second conductivity type semiconductor layer sequentially disposed on the side surface of the core; and a contact electrode on surfaces of the plurality of light emitting core-shell structures, wherein the upper surface of the core is provided as an upper surface of each of the light emitting core-shell structures, and a upper surface of the contact electrode is lower than the upper surface of each of the light emitting core-shell structures.