CLOSED-LOOP RESONATOR SILICON GERMANIUM PHOTODETECTOR APPARATUS AND OTHER SEMICONDUCTOR DEVICES INCLUDING CURVED-SHAPE SILICONE GERMANIUM STRUCTURES

摘要

Semiconductor devices, such as photonics devices, employ substantially curved-shaped Silicon-Germanium (SiGe) structures and are fabricated using zero-change CMOS fabrication process technologies. In one example, a closed-loop resonator waveguide-coupled photodetector includes a silicon resonator structure formed in a silicon substrate, interdigitated n-doped well-implant regions and p-doped well-implant regions forming multiple silicon p-n junctions around the silicon resonator structure, and a closed-loop SiGe photocarrier generation region formed in a pocket within the interdigitated n-doped and p-doped well implant regions. The closed-loop SiGe region is located so as to substantially overlap with an optical mode of radiation when present in the silicon resonator structure, and traverses the multiple silicon p-n junctions around the silicon resonator structure. Electric fields arising from the respective p-n silicon junctions significantly facilitate a flow of the generated photocarriers between electric contact regions of the photodetector.

主权项

1. A photodetector apparatus, comprising:
a silicon substrate; a first plurality of n-doped well-implant regions formed in the silicon substrate; a second plurality of p-doped well-implant regions formed in the silicon substrate and interdigitated with the first plurality of n-doped well-implant regions so as to form a plurality of silicon p-n junctions; and a curved-shape Silicon Germanium (SiGe) region formed within both the first plurality of n-doped well-implant regions and the second plurality of p-doped well-implant regions such that the plurality of p-n junctions are contiguous with the curved-shaped SiGe region.