OXIDE ETCH SELECTIVITY SYSTEMS AND METHODS

摘要

Embodiments of the present technology may include a method of etching a substrate. The method may include striking a plasma discharge in a plasma region. The method may also include flowing a fluorine-containing precursor into the plasma region to form a plasma effluent. The plasma effluent may flow into a mixing region. The method may further include introducing a hydrogen-and-oxygen-containing compound into the mixing region without first passing the hydrogen-and-oxygen-containing compound into the plasma region. Additionally, the method may include reacting the hydrogen-and-oxygen-containing compound with the plasma effluent in the mixing region to form reaction products. The reaction products may flow through a plurality of openings in a partition to a substrate processing region. The method may also include etching the substrate with the reaction products in the substrate processing region.

主权项

1. A substrate processing system, the system comprising:
a first gas inlet; a pedestal configured to support a substrate; a showerhead positioned between the first gas inlet and the pedestal, the showerhead comprising an electrically conductive plate defining a first plurality of openings; a partition positioned between the pedestal and the showerhead, the partition defining a second plurality of openings; a second gas inlet positioned at the showerhead or between the showerhead and the partition; a plasma region defined between the first gas inlet and the showerhead; a substantially plasma-free region defined between the showerhead and the partition; a substrate processing region defined between the partition and the pedestal; and a power supply configured to strike a plasma discharge in the plasma region.