SEMICONDUCTOR DEVICE

摘要

Higher voltage resistance is accomplished by expanding a depletion layer more quickly within a circumferential region. A semiconductor device includes an element region, in which an insulated gate type switching element is provided, and the circumferential region. A first trench and a second trench spaced apart from the first trench are provided in the front surface in the circumferential region. Insulating films are provided in the first trench and the second trench. A fourth region of the second conductivity type is provided so as to extend from a bottom surface of the first trench to a bottom surface of the second trench. A fifth region of the first conductivity type continuous from the third region is provided under the fourth region.

主权项

1. A semiconductor device comprising:
a semiconductor substrate; a front surface electrode provided on a front surface of the semiconductor substrate; and a rear surface electrode provided on a rear surface of the semiconductor substrate; the semiconductor substrate comprising: an element region in which an insulated gate type switching element configured to switch between the front surface electrode and the rear surface electrode is provided; and a circumference region adjacent to the element region, the insulated gate type switching element comprising: a first region of first conductivity type connected to the front surface electrode; a second region of second conductivity type connected to the front surface electrode and being in contact with the first region; a third region of the first conductivity type provided under the second region and separated from the first region by the second region; a gate trench provided in the front surface in the element region, a gate insulating film provided in the gate trench and being in contact with the second region; a gate electrode provided in the gate trench and facing the second region via the gate insulating film, and a sixth region of the second conductivity type provided in a range in the semiconductor substrate, the range including a bottom surface of the gate trench, wherein a first trench and a second trench spaced apart from the first trench are provided in the front surface in the circumference region, insulating films are provided in the first trench and the second trench, a fourth region of the second conductivity type is provided so as to extend from a bottom surface of the first trench to a bottom surface of the second trench, and a fifth region of the first conductivity type continuous from the third region is provided under the fourth region.