| 发明名称 |
CAPACITOR STRUCTURE AND METHOD OF FORMING A CAPACITOR STRUCTURE |
| 摘要 |
The present disclosure provides, in accordance with some illustrative embodiments, a capacitor structure comprising an active region formed in a semiconductor substrate, a MOSFET device comprising source and drain regions formed in the active region and a gate electrode formed above the active region, and a first electrode and a second electrode formed in a metallization layer above the MOSFET device, wherein the first electrode is electrically connected with the source and drain regions via respective source and drain contacts and the second electrode is electrically connected with the gate electrode via a gate contact. |
| 申请公布号 |
US2017040354(A1) |
申请公布日期 |
2017.02.09 |
| 申请号 |
US201615042547 |
申请日期 |
2016.02.12 |
| 申请人 |
GLOBALFOUNDRIES Inc. |
发明人 |
Smith Elliot John;Beyer Sven;Hoentschel Jan;Ebermann Alexander |
| 分类号 |
H01L27/13;H01L29/78;H01L21/84;H01L29/06;H01L27/12;H01L49/02;H01L29/66 |
主分类号 |
H01L27/13 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A capacitor structure, comprising:
an active region formed in a semiconductor substrate; a MOSFET device comprising source and drain regions formed in said active region and a gate electrode formed above said active region; and a first electrode and a second electrode formed in a metallization layer above said MOSFET device; wherein said first electrode is electrically connected with said source and drain regions via respective source and drain contacts and said second electrode is electrically connected with said gate electrode via a gate contact. |
| 地址 |
Grand Cayman KY |
