| 发明名称 |
SEMICONDUCTOR DEVICE HAVING IMPROVED CORE AND INPUT/OUTPUT DEVICE RELIABILITY |
| 摘要 |
A semiconductor device includes a semiconductor substrate having a core device and an IO device. The core device includes a gate interface layer and a high-k dielectric layer on the gate interface layer. The IO device includes a gate interface layer and a high-k dielectric layer on the gate interface layer. The gate interface layer of the core device and the gate interface layer of the IO device each are doped with fluoride ions |
| 申请公布号 |
US2017040310(A1) |
申请公布日期 |
2017.02.09 |
| 申请号 |
US201615299282 |
申请日期 |
2016.10.20 |
| 申请人 |
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION |
发明人 |
XIE XINYUN |
| 分类号 |
H01L27/02;H01L29/51;H01L21/28;H01L29/66;H01L21/8234;H01L27/088;H01L29/78;H01L29/423 |
主分类号 |
H01L27/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a semiconductor substrate having a core device and an IO device, the core device comprising a gate interface layer and a high-k dielectric layer on the gate interface layer, the IO device comprising a gate interface layer and a high-k dielectric layer on the gate interface layer, wherein the gate interface layer of the core device and the gate interface layer of the IO device each are doped with fluoride ions, and wherein the high-k dielectric layer of the core device and the high-k dielectric layer of the IO device each are doped with fluoride ions. |
| 地址 |
Shanghai CN |
