BOND PAD STRUCTURE FOR LOW TEMPERATURE FLIP CHIP BONDING

摘要

Methods for preparing 3D integrated semiconductor devices and the resulting devices are disclosed. Embodiments include forming a first and a second bond pad on a first and a second semiconductor device, respectively, the first and the second bond pads each having plural metal segments, the metal segments of the first bond pad having a configuration different from a configuration of the metal segments of the second bond pad or having the same configuration as a configuration of the metal segments of the second bond pad but rotated with respect to the second bond pad; and bonding the first and second semiconductor devices together through the first and second bond pads.

主权项

1. A device comprising:
a first and a second semiconductor device having first and second bond pads, respectively, bonded together through the first and second bond pads, the first and second bond pads each having plural metal segments, the metal segments of the first bond pad having a configuration different from a configuration of the metal segments of the second bond pad or having a configuration rotated with respect to a configuration of the metal segments of the second bond pad, wherein the metal segments of the first bond pad on the first semiconductor device comprise only columns of segments, the columns being staggered with respect to each other, and the metal segments of the second bond pad on the second semiconductor device comprise only rows of segments, the rows being staggered with respect to each other, wherein the columns of segments are perpendicular to the rows of segments.