| 发明名称 |
METHOD FOR REDUCING CHARGE IN CRITICAL DIMENSION-SCANNING ELECTRON MICROSCOPE METROLOGY |
| 摘要 |
Methods and compositions are provided for reducing or eliminating charge buildup during scanning electron microscopy (SEM) metrology of a critical dimension (CD) in a structure produced by lithography. An under layer is utilized that comprises silicon in the construction of the structure. When the lithography structure comprising the silicon-comprising under layer is scanned for CDs using SEM, the under layer reduces or eliminates charge buildup during SEM metrological observations. |
| 申请公布号 |
US2017040228(A1) |
申请公布日期 |
2017.02.09 |
| 申请号 |
US201615298445 |
申请日期 |
2016.10.20 |
| 申请人 |
The Research Foundation for The State University of New York ;Sematech, Inc. |
发明人 |
Montgomery Melvin W.;Montgomery Cecilia A.;Bunday Benjamin D. |
| 分类号 |
H01L21/66;G01N23/225;G03F7/20;G03F7/09;G03F7/075;H01L21/027;G01B15/00 |
主分类号 |
H01L21/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for reducing charging and/or shrinkage in a surface of interest during measurement of the surface in the manufacture of an integrated device, the method comprising:
(a) providing a substrate; (b) positioning a silicon-comprising under layer on the substrate; (c) positioning a patterned photoresist image layer on the under layer; (d) delivering an electron beam to the surface of interest; and (e) measuring the surface of interest with the electron beam, thereby reducing charging and/or shrinkage. |
| 地址 |
Albany NY US |
