发明名称 |
LIQUID CRYSTAL DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
A liquid crystal display device includes a substrate; a gate electrode on the substrate; a semiconductor pattern layer on the gate electrode; and source and drain electrodes on the semiconductor pattern layer and spaced apart from each other. The source electrode includes: a first facing portion facing the drain electrode; and a first protrusion protruding toward the drain electrode from the first protrusion. The drain electrode includes: a second facing portion facing the source electrode; and a second protrusion protruding toward the source electrode from the second facing portion and facing the first protrusion. The semiconductor pattern layer includes: a source area overlapping the source electrode; a drain area overlapping the drain electrode; and a bridge area connecting the source area with the drain area, and a space defined between the first protrusion and the second protrusion is on the bridge area. |
申请公布号 |
US2017038623(A1) |
申请公布日期 |
2017.02.09 |
申请号 |
US201615228549 |
申请日期 |
2016.08.04 |
申请人 |
Samsung Display Co. Ltd. |
发明人 |
LEE Joo Hyung;CHOI Shin Il;KO Kyeong Su;KIM Dong Il;YEO Jong Mo |
分类号 |
G02F1/1368;H01L21/308;H01L21/3213;H01L29/417;H01L27/12 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
1. A liquid crystal display device comprising:
a substrate; a gate electrode disposed on the substrate; a semiconductor pattern layer disposed on the gate electrode; a source electrode disposed on the semiconductor pattern layer; and a drain electrode disposed on the semiconductor pattern layer and spaced apart from the source electrode, wherein the source electrode comprises:
a first facing portion which faces the drain electrode; anda first protrusion which protrudes toward the drain electrode from the first protrusion, wherein the drain electrode comprises:
a second facing portion which faces the source electrode; anda second protrusion which protrudes toward the source electrode from the second facing portion and faces the first protrusion, and wherein the semiconductor pattern layer comprises:
a source area overlapping the source electrode;a drain area overlapping the drain electrode; anda bridge area which connects the source area with the drain area, and wherein a space defined between the first protrusion and the second protrusion is disposed on the bridge area. |
地址 |
Yongin-city KR |