发明名称 SUBSTRATE PROCESSING DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND RECORDING MEDIUM
摘要 [Problem] To shorten a time required for reducing oxygen concentration in a transfer chamber. [Solution] The present invention is provided with: a transfer chamber wherein a substrate is transferred from a storing container having the substrate stored therein; a purge gas supply mechanism that supplies a purge gas into the transfer chamber; and a pressure control mechanism, which is disposed in an exhaust path for releasing atmosphere from the transfer chamber, and controls pressure in the transfer chamber. The pressure control mechanism has: an exhaust damper that fully opens or fully closes the exhaust path; and an adjustment damper, which is disposed in the exhaust damper, and holds the inside of the transfer chamber at predetermined pressure.
申请公布号 WO2017022366(A1) 申请公布日期 2017.02.09
申请号 WO2016JP69123 申请日期 2016.06.28
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 KAMIMURA, Daigi;ITO, Takeshi;TANIYAMA, Tomoshi
分类号 H01L21/677;C23C16/44;H01L21/02;H01L21/22;H01L21/31;H01L21/316;H01L21/318;H01L21/324 主分类号 H01L21/677
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