发明名称 |
SUBSTRATE PROCESSING DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND RECORDING MEDIUM |
摘要 |
[Problem] To shorten a time required for reducing oxygen concentration in a transfer chamber. [Solution] The present invention is provided with: a transfer chamber wherein a substrate is transferred from a storing container having the substrate stored therein; a purge gas supply mechanism that supplies a purge gas into the transfer chamber; and a pressure control mechanism, which is disposed in an exhaust path for releasing atmosphere from the transfer chamber, and controls pressure in the transfer chamber. The pressure control mechanism has: an exhaust damper that fully opens or fully closes the exhaust path; and an adjustment damper, which is disposed in the exhaust damper, and holds the inside of the transfer chamber at predetermined pressure. |
申请公布号 |
WO2017022366(A1) |
申请公布日期 |
2017.02.09 |
申请号 |
WO2016JP69123 |
申请日期 |
2016.06.28 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
KAMIMURA, Daigi;ITO, Takeshi;TANIYAMA, Tomoshi |
分类号 |
H01L21/677;C23C16/44;H01L21/02;H01L21/22;H01L21/31;H01L21/316;H01L21/318;H01L21/324 |
主分类号 |
H01L21/677 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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