SEMICONDUCTOR MEMORY DEVICES HAVING VERTICAL PILLARS THAT ARE ELECTRICALLY CONNECTED TO LOWER CONTACTS

摘要

A semiconductor memory device may include an electrode structure including a selection line on a substrate and word lines between the substrate and the selection line, vertical pillars penetrating the electrode structure and being connected to the substrate, sub-interconnections and bit lines sequentially stacked on and electrically connected to the vertical pillars, and lower contacts connecting the vertical pillars to the sub-interconnections. The selection line may include a plurality of selection lines separated from each other in a first direction by an insulating separation layer, and central axes of the lower contacts connected in common to one of the sub-interconnections may be shifted, in a second direction across the first direction and parallel to a top surface of the substrate, from central axes of the vertical pillars thereunder.

主权项

1. A semiconductor memory device, comprising:
a substrate having an upper surface that extends in a first direction and in a second direction that is perpendicular to the first direction; a first electrode structure and a second electrode structure on the upper surface of the substrate that are spaced apart from each other along the second direction; a plurality of vertical pillars that comprise a first set of vertical pillars and a second set of vertical pillars, the vertical pillars in the first set penetrating through the first electrode structure and the vertical pillars in the second set penetrating through the second electrode structure; a plurality of lower contacts that vertically overlap and electrically connect to respective ones of the vertical pillars; and a plurality of sub-interconnections that electrically connect respective ones of the vertical pillars in the first set to respective ones of the vertical pillars in the second set, wherein central axes of the lower contacts are offset from central axes of the respective vertical pillars that the lower contacts vertically overlap.