DEVICES INCLUDING GATES WITH MULTIPLE LENGTHS AND METHODS OF MANUFACTURING SAME

摘要

A method for manufacturing a semiconductor device comprises forming a first dummy gate layer on a substrate, forming a second dummy gate layer on the substrate adjacent the first dummy gate layer, wherein the second dummy gate layer comprises a material which is capable of being selectively etched with respect a material of the first dummy gate layer, and patterning each of the first and second dummy gate layers into a plurality of first dummy gate stacks and a plurality of second dummy gate stacks, respectively, wherein the first dummy gate stacks are each wider along a gate length direction than each of the second dummy gate stacks, wherein the patterning is performed using a reactive ion etch (RIE) process that results in different lateral trimming between the first and second dummy gate layers.

主权项

1. A semiconductor device, comprising:
an integrated circuit having:
at least two transistors on a substrate with different gate lengths from each other;a silicon resistor on the substrate; anda silicon germanium resistor on the substrate;wherein the silicon and silicon germanium resistors have different resistivities from each other.