发明名称 |
THROUGH-BODY-VIA ISOLATED COAXIAL CAPACITOR AND TECHNIQUES FOR FORMING SAME |
摘要 |
Techniques are disclosed for forming a through-body-via (TBV) isolated coaxial capacitor in a semiconductor die. In some embodiments, a cylindrical capacitor provided using the disclosed techniques may include, for example, a conductive TBV surrounded by a dielectric material and an outer conductor plate. The TBV and outer plate can be formed, for example, so as to be self-aligned with one another in a coaxial arrangement, in accordance with some embodiments. The disclosed capacitor may extend through the body of a host die such that its terminals are accessible on the upper and/or lower surfaces thereof. Thus, in some cases, the host die can be electrically connected with another die to provide a die stack or other three-dimensional integrated circuit (3D IC), in accordance with some embodiments. In some instances, the disclosed capacitor can be utilized, for example, to provide integrated capacitance in a switched-capacitor voltage regulator (SCVR). |
申请公布号 |
US2017040255(A1) |
申请公布日期 |
2017.02.09 |
申请号 |
US201315038623 |
申请日期 |
2013.12.23 |
申请人 |
ZILLMANN Uwe;SCHAEFER Andre;SARASWAT Ruchir;DROEGE Guido;JAIN Rinkle;COWLEY Nicholas P.;INTEL CORPORATION |
发明人 |
LEE KEVIN J.;SARASWAT RUCHIR;ZILLMANN UWE;COWLEY NICHOLAS P.;SCHAEFER ANDRE;JAIN RINKLE;DROEGE GUIDO |
分类号 |
H01L23/522;H01L21/822;H01L23/492;H01L21/48;H01L27/06;H01L23/498 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
1. An integrated circuit comprising:
a semiconductor layer; and a capacitor formed within the semiconductor layer, the capacitor comprising:
an electrically conductive through-body via (TBV);an electrically conductive plate surrounding the TBV and arranged coaxially therewith; anda dielectric layer disposed between the TBV and the plate. |
地址 |
Braunschweig DE |