发明名称 THROUGH-BODY-VIA ISOLATED COAXIAL CAPACITOR AND TECHNIQUES FOR FORMING SAME
摘要 Techniques are disclosed for forming a through-body-via (TBV) isolated coaxial capacitor in a semiconductor die. In some embodiments, a cylindrical capacitor provided using the disclosed techniques may include, for example, a conductive TBV surrounded by a dielectric material and an outer conductor plate. The TBV and outer plate can be formed, for example, so as to be self-aligned with one another in a coaxial arrangement, in accordance with some embodiments. The disclosed capacitor may extend through the body of a host die such that its terminals are accessible on the upper and/or lower surfaces thereof. Thus, in some cases, the host die can be electrically connected with another die to provide a die stack or other three-dimensional integrated circuit (3D IC), in accordance with some embodiments. In some instances, the disclosed capacitor can be utilized, for example, to provide integrated capacitance in a switched-capacitor voltage regulator (SCVR).
申请公布号 US2017040255(A1) 申请公布日期 2017.02.09
申请号 US201315038623 申请日期 2013.12.23
申请人 ZILLMANN Uwe;SCHAEFER Andre;SARASWAT Ruchir;DROEGE Guido;JAIN Rinkle;COWLEY Nicholas P.;INTEL CORPORATION 发明人 LEE KEVIN J.;SARASWAT RUCHIR;ZILLMANN UWE;COWLEY NICHOLAS P.;SCHAEFER ANDRE;JAIN RINKLE;DROEGE GUIDO
分类号 H01L23/522;H01L21/822;H01L23/492;H01L21/48;H01L27/06;H01L23/498 主分类号 H01L23/522
代理机构 代理人
主权项 1. An integrated circuit comprising: a semiconductor layer; and a capacitor formed within the semiconductor layer, the capacitor comprising: an electrically conductive through-body via (TBV);an electrically conductive plate surrounding the TBV and arranged coaxially therewith; anda dielectric layer disposed between the TBV and the plate.
地址 Braunschweig DE