发明名称 PHOTOELECTRIC CONVERSION ELEMENT, PHOTOELECTRIC CONVERSION APPARATUS USING THE SAME, DISTANCE DETECTION SENSOR, AND INFORMATION PROCESSING SYSTEM
摘要 A photoelectric conversion element includes a first photoelectric conversion unit configured to generate an electron serving as a signal charge, a second photoelectric conversion unit configured to generate a hole serving as a signal charge, a first floating diffusion region to which the electron generated in the first photoelectric conversion unit is transferred, a second floating diffusion region to which the hole generated in the second photoelectric conversion unit is transferred, an amplifying transistor including a gate electrically connected to the first floating diffusion region and the second floating diffusion region, a first charge ejection unit configured to eject the electron generated in the first photoelectric conversion unit, and a second charge ejection unit configured to eject the hole generated in the second photoelectric conversion unit, wherein the first photoelectric conversion unit and the second photoelectric conversion unit are arranged along a principal surface of a semiconductor substrate.
申请公布号 US2017038471(A1) 申请公布日期 2017.02.09
申请号 US201615228946 申请日期 2016.08.04
申请人 CANON KABUSHIKI KAISHA 发明人 Ikeda Hajime;Goden Tatsuhito;Wada Yoichi;Ota Keisuke;Hasegawa Toshinori
分类号 G01S17/08;G05D1/02;G01S17/93;H01L31/173;H01L27/146 主分类号 G01S17/08
代理机构 代理人
主权项 1. A photoelectric conversion element comprising: a first photoelectric conversion unit configured to generate an electron serving as a signal charge; a second photoelectric conversion unit configured to generate a hole serving as a signal charge; a first floating diffusion region to which the electron generated in the first photoelectric conversion unit is transferred; a second floating diffusion region to which the hole generated in the second photoelectric conversion unit is transferred; an amplifying transistor including a gate electrically connected to the first floating diffusion region and the second floating diffusion region; a first charge ejection unit configured to eject the electron generated in the first photoelectric conversion unit; and a second charge ejection unit configured to eject the hole generated in the second photoelectric conversion unit wherein the first photoelectric conversion unit and the second photoelectric conversion unit are arranged along a principal surface of a semiconductor substrate.
地址 Tokyo JP