发明名称 |
SEMICONDUCTOR DEVICE, DISPLAY DEVICE, DISPLAY MODULE, ELECTRONIC DEVICE, OXIDE, AND MANUFACTURING METHOD OF OXIDE |
摘要 |
The semiconductor device includes a first insulator over a substrate, a first oxide semiconductor over the first insulator, a second oxide semiconductor over the first oxide semiconductor, a first conductor and a second conductor in contact with the second oxide semiconductor, a third oxide semiconductor on the second oxide semiconductor and the first and second conductors, a second insulator over the third oxide semiconductor, and a third conductor over the second insulator. At least one of the first oxide semiconductor, the second oxide semiconductor, and the third oxide semiconductor has a crystallinity peak that corresponds to a (hkl) plane (h = 0, k = 0, l is a natural number) observed by X-ray diffraction using a Cu K-alpha radiation as a radiation source. The peak appears at a diffraction angle 2 theta greater than or equal to 31.3 degrees and less than 33.5 degrees. |
申请公布号 |
WO2016103126(A8) |
申请公布日期 |
2017.02.09 |
申请号 |
WO2015IB59755 |
申请日期 |
2015.12.18 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
KAWATA, Takuya;OOTA, Masashi;NONAKA, Yusuke;YAMAZAKI, Shunpei |
分类号 |
C23C14/08;C23C14/34;H01L21/363;H01L29/24;H01L29/786 |
主分类号 |
C23C14/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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