FINFET DEVICE AND METHOD OF MAKING THE SAME

摘要

A finFET device according to some examples herein may include an active gate element above an active fin element and a dummy fin element that partially breaks the active gate element. In another example, a dummy gate element adjacent to an active gate element contains a dummy fin element that partially breaks the dummy gate element. In another example, a first dummy fin element partially breaks an active gate element and a second dummy fin element partially breaks a dummy gate element. In another example, the dummy fin element is of the same material as the active fin element. In another example, the dummy fin element partially breaks a gate element but does not extend to the substrate like the active fin element.

主权项

1. A finFET device, comprising:
an active gate element; a first dummy gate element extending parallel to the active gate element, proximate to a first edge of the active gate element; a second dummy gate element extending parallel to the active gate element proximate to a second edge opposite the first edge of the active gate element; a first active fin element extending perpendicular to and vertically below the active gate element, the first dummy gate element, and the second dummy gate element; a second active fin element extending parallel to the first active fin element and horizontally spaced therefrom; and a first dummy fin element between the first active fin element and the second active fin element, the first dummy fin element extending perpendicular to and vertically below the active gate element and partially surrounded by the active gate element.