| 发明名称 |
BONDING WIRE FOR SEMICONDUCTOR DEVICE |
| 摘要 |
There is provided a bonding wire that improves bonding reliability of a ball bonded part and ball formability and is suitable for on-vehicle devices.;The bonding wire for a semiconductor includes a Cu alloy core material, and a Pd coating layer formed on a surface of the Cu alloy core material, and is characterized in that the Cu alloy core material contains Ni, a concentration of Ni is 0.1 to 1.2 wt. % relative to the entire wire, and a thickness of the Pd coating layer is 0.015 to 0.150 μm. |
| 申请公布号 |
US2017040281(A1) |
申请公布日期 |
2017.02.09 |
| 申请号 |
US201515305238 |
申请日期 |
2015.04.21 |
| 申请人 |
NIPPON STEEL & SUMIKIN MATERIALS CO., LTD. ;NIPPON MICROMETAL CORPORATION |
发明人 |
OYAMADA Tetsuya;UNO Tomohiro;DEAI Hiroyuki |
| 分类号 |
H01L23/00;B32B15/20;B32B15/01;B23K35/30;C22C9/06 |
主分类号 |
H01L23/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A bonding wire for a semiconductor device comprising:
a Cu alloy core material; and a Pd coating layer formed on a surface of the Cu alloy core material, wherein the Cu alloy core material contains Ni, a concentration of Ni is 0.1 to 1.2 wt. % relative to the entire wire, and a thickness of the Pd coating layer is 0.015 to 0.150 □m. |
| 地址 |
Tokyo JP |
