| 发明名称 |
METHOD FOR PROCESSING SUBSTRATE |
| 摘要 |
A method for processing a substrate exposes a silicon-containing surface at a circumferential edge portion of a first main surface of a substrate to be processed, performs surface processing to the silicon-containing surface to increase a contact angle of the silicon-containing surface with respect to a resist material, comparing with the contact angle before the surface processing is performed, supplies the resist material onto the substrate to be processed after the surface processing, and transfers a template pattern to the resist material. |
| 申请公布号 |
US2017040231(A1) |
申请公布日期 |
2017.02.09 |
| 申请号 |
US201615066667 |
申请日期 |
2016.03.10 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SATO Nobuyoshi |
| 分类号 |
H01L21/66;H01L21/02;H01L21/027 |
主分类号 |
H01L21/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for processing a substrate, comprising:
exposing a silicon-containing surface at a circumferential edge portion of a first main surface of a substrate to be processed; performing surface processing to the silicon-containing surface to increase a contact angle of the silicon-containing surface with respect to a resist material, comparing with the contact angle before the surface processing is performed; supplying the resist material onto the substrate to be processed after the surface processing; and transferring a template pattern to the resist material. |
| 地址 |
Tokyo JP |
