GENERATOR OF TRANSIENT, HEAVY ELECTRONS AND APPLICATION TO TRANSMUTING RADIOACTIVE FISSION PRODUCTS

摘要

Use of adsorption, desorption, particle injection and other means to excite electrons to a region on their band structure diagram near an inflection point were the transient effective mass is elevated proportional to the inverse of curvature. These transient heavy electrons may then cause transmutations similar to transmutations catalyzed by the muons used by Alvarez at UC Berkeley during 1956 in liquid hydrogen. The heavy electrons may also control chemical reactions.

主权项

1. A device to generate and detect a transient, elevated density of electrons with elevated effective mass, the device comprising:
a first reaction layer placed on a first electrode and a second reaction layer placed on a second electrode wherein:
at least one of the first reaction layer or the second reaction layer comprises a material that conducts electrons and readily absorbs and desorbs an injection gas;the first electrode and the second electrode are electrically separate; reactants on or in the first reaction layer or the second reaction layer are located to a depth no deeper than a characteristic mean free path of particles and excitations associated with the allowed transmutation reactions of the reactants; a region between the first reaction layer and the second reaction layer, the region comprising sputter gas and at least one of the injection gas or a substance that releases the injection gas; an alternating voltage having positive, negative and dead time phases, wherein the alternating voltage is electrically connected to the first reaction layer and the second reaction layer with voltage sufficient to initiate glow discharge sputtering between the first reaction layer and the second reaction layer; wherein:
the first reaction layer and the second reaction layer are arranged so that the material sputtered from the first reaction layer deposits on the second reaction layer during a positive phase of the alternating voltage and the material sputtered from the second reaction layer deposits on the first reaction layer during a negative phase of the alternating voltage;a concentration of transmuted reactant catalyzed by heavy electrons created within the characteristic mean free path provides a measure of a density of heavy electrons created by simultaneous injection of energy, crystal momentum, and the injection gas.